STMicroelectronics STD1NK80ZT4
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.| Part No. | STD1NK80ZT4 |
|---|---|
| Datasheet | STD1NK80ZT4 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS RDS(on) max. ID STD1NK80ZT4 800 V 16 Ω 1● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD1NK80ZT4 Product summary Order code STD1NK80ZT4 Marking D1NK80Z Package DPAK Packing Tape and reel DS4318 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office. STD1NK80ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
