STMicroelectronics STD20N20
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.| Part No. | STD20N20 |
|---|---|
| Datasheet | STD20N20 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STD20N20 STF20N20 STP20N20 s s s s Figure 1: Package Id 18 A 18 A 18 A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS 200 V 200 V 200 V RDS(on) < 0.125 Ω < 0.125 Ω < 0.125 Ω TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100% AVALANCHE TESTED TO-220 TO-220FPDESCRIPTION
3 1 DPAK Figure 2: Internal Schematic DiagramAPPLICATIONS
s HIGH CURRENT SWITCHINGAPPLICATIONS
s HIGH EFFICIENCY DC-DC CONVERTERS s PRIMARY SIDE SWITCH Table 2: Order Codes SALES TYPE STD20N20T4 STF20N20 STP20N20 MARKING D20N20 F20N20 P20N20 PACKAGE DPAK TO-220FP TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev. 3 January 2005 1/13 STP20N20 - STF20N20 - STD20N20 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter TO-220/DPAK Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 90 0.72 15 -50 to 150 200 200 ± 20 18 11 72 25 0.
