STMicroelectronics STD20NE06
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD20NE06 |
|---|---|
| Datasheet | STD20NE06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 60 60 ± 20 20** 17 80 50 0.33 7 -65 to 175 175 ( 1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C (●) Pulse width limited by safe operating area (**) Value limited only by the package January 1998 1/8 STD20NE06 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Jun...
