STMicroelectronics STD20P3H6AG
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD20P3H6AG |
|---|---|
| Datasheet | STD20P3H6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD20P3H6AG VDS -30 V RDS(on) max. 50 mΩ ID -20 A● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STD20P3H6AG AM11258v1 Table 1: Device summary Marking Package 20P3H6 DPAK Packing Tape and reel September 2015 DocID028377 Rev 2 This is information on a product in full production. 1/15 Contents Contents STD20P3H6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .......................................................................
