STD20P3H6AG Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD20P3H6AG AM11258v1 Table.
STD20P3H6AG Key Features
- Designed for automotive