STD22NM20N Datasheet | STMicroelectronics

N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE VDSS RDS(on) 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPUT CAPACITANCE s LOW GATE RESISTANCE DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Tele and puter applications. Used in bination with secondary-side low-voltage STripFET™...