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STD22NM20N - N-CHANNEL MOSFET

General Description

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages.

The device exhibits worldwide lowest gate charge for any given onresistance.

Key Features

  • TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD22NM20N N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPUT CAPACITANCE s LOW GATE RESISTANCE DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting effeciency.