STMicroelectronics STD22NM20N
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.| Part No. | STD22NM20N |
|---|---|
| Datasheet | STD22NM20N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPUT CAPACITANCE s LOW GATE RESISTANCEDESCRIPTION
Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting effeciency. Figure 1: Package 3 1 DPAK Figure 2: Internal Schematic DiagramAPPLICATIONS
The MDmesh™ family is very suitable for increasing power density allowing system miniaturization and higher efficiencies Table 2: Order Codes SALES TYPE STD22NM20NT4 MARKING D22NM20N PACKAGE DPAK PACKAGING TAPE & REEL June 2005 Rev. 4 1/10 STD22NM20N Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25° Drain Cur...
