STMicroelectronics STD25NE03L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD25NE03L |
|---|---|
| Datasheet | STD25NE03L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT(INJECTION, ABS, AIR-BG, LAMPDRIVERS, Etc.) IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (● ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Storage T emperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 20** 18** 100 45 0.3 -65 to 175 175 (**) Value limited only by the package Unit V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area March 1999 1/9 STD25NE03L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case...
