STMicroelectronics STD25NF10LT4
This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STD25NF10LT4 |
|---|---|
| Datasheet | STD25NF10LT4 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDS STD25NF10LT4 100 V● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
● Switching applications RDS(on) max. 35 mΩ ID 25 A G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link STD25NF10LT4 Product summary Order code STD25NF10LT4 Marking D25NF10L Package DPAK Packing Tape and reel DS3055 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Gate-source voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C EAS(2) Single-pulse avalanche energy dv/dt(3) Peak diode recovery voltage slope Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. Starting TJ = 25 °C, ID = 12.5 A, VDD = 50 V 3.
