STMicroelectronics STD25NF20
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.FEATURES
TAB 3 1 DPAK Figure 1. Internal schematic diagram ' 7$% * 6 $0 Y Order code STD25NF20 VDS @ TJmax 200 V RDS(on) max 0.125 Ω ID 18 A PTOT 110 W● Designed for automotive applications and AEC-Q101 qualified
● Extremely low gate charge
● Exceptional dv/dt capability
● Low gate input resistance
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD25NF20 Table 1. Device summary Marking Package 25NF20 DPAK Packaging Tape and reel September 2013 This is information on a product in full production. DocID024372 Rev 2 1/16 16 Contents Contents STD25NF20 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .