STMicroelectronics STD26P3LLH6
This device is a P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.| Part No. | STD26P3LLH6 |
|---|---|
| Datasheet | STD26P3LLH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max ID STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness
● Low gate input resistance PTOT 40 W
APPLICATIONS
● Switching applications● LCC converters, resonant converters
DESCRIPTION
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages S(3) AM11258v1 Order code STD26P3LLH6 Table 1. Device summary Marking Package 26P3LLH6 DPAK Packaging Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. February
