STD26P3LLH6 Datasheet | STMicroelectronics

P-channel 30 V, 0.024 Ω typ., 12 A, STrip FET™ VI Deep GATE™ Power MOSFET in a DPAK package - production data Features TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate input resistance PTOT 40 W Applications - Switching applications - LCC converters, resonant converters Description This device is a P-channel Power MOSFET th developed using the 6 generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages S(3) AM11258v1 Order code STD26P3LLH6 Table 1. Device summary Marking Package 26P3LLH6...