STMicroelectronics STD28P3LLH6AG
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD28P3LLH6AG |
|---|---|
| Datasheet | STD28P3LLH6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | P-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
● Logic level
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD28P3LLH6AG Table 1: Device summary Marking Package 28P3LLH6 DPAK Packing Tape and reel September 2015 DocID028397 Rev 1 This is information on a product in full production. 1/15 Contents Contents STD28P3LLH6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .......................................................................
