Datasheet4U Logo Datasheet4U.com

STD2N105K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD2N50 N-CHANNEL MOSFET ST Microelectronics
STD2NA50 N-CHANNEL MOSFET ST Microelectronics
STD2NA60 N-CHANNEL MOSFET ST Microelectronics
STD2NB25 N-CHANNEL MOSFET ST Microelectronics
STD2NB40 N-CHANNEL MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD2N62K3 N-channel Power MOSFET
STD2N80K5 N-channel Power MOSFET
STD2N95K5 N-channel Power MOSFET
STD2NK100Z N-channel Power MOSFET
STD2NK60Z-1 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB 3 1 DPAK TAB TAB 3 2 1 TO-220 IPAK 3 2 1 Figure 1. Internal schematic diagram ' 7$% Features Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications *  6  AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.