STD2NB50 Datasheet PDF | STMicroelectronics

STMicroelectronics STD2NB50

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STD2NB50
Datasheet	STD2NB50 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
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DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

APPLICATIONS

s SWITH MODE POWER SUPPLIES (SMPS) s LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ± 30 1 0.63 4 40 0.32 3.5 –65 to 150 150 (1)ISD ≤ 1A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C 1/10 (●)Pulse width limited by safe operating area September 2001 STD2NB50/STD2NB50-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junct...