STD2NC40-1 Datasheet PDF

DESCRIPTION

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITH MODE LOW POWER SUPPLIES (SMPS) s CFL

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (s) PTOT dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ±30 1.5 0.95 6 30 0.24 3.5 –60 to 150 150 (1)ISD ≤ 1.5A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/ °C V/ns °C °C (●)Pulse width limited by safe operating area May 2000 This is preliminary information on a new product now in development or undergoing evaluation.