STMicroelectronics STD2NC45-1
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.FEATURES
● Extremely high dv/dt capability● 100% avalanche tested
● Gate charge minimized
● New high voltage benchmark Application
● Switching applications
DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order code STD2NC45-1 Marking D2NC45 Package IPAK Packaging Tube April 2009 Doc ID 9103 Rev 4 1/13 13 Contents Contents STD2NC45-1 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .