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STD2NK70Z-1 - N-CHANNEL 700V - 6W - 1.6A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Download the STD2NK70Z-1 datasheet PDF. This datasheet also covers the STD2NK70Z variant, as both devices belong to the same n-channel 700v - 6w - 1.6a dpak/ipak zener-protected supermeshtm mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application.

Key Features

  • TYPE STD2NK70Z STD2NK70Z-1 s s s s s s STD2NK70Z - STD2NK70Z-1 www. DataSheet4U. com Figure 1: Package ID 1.6 A 1.6 A Pw 45 W 45 W 7Ω 7Ω VDSS 700 V 700 V RDS(on).

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Note: The manufacturer provides a single datasheet file (STD2NK70Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STD2NK70Z-1
Manufacturer STMicroelectronics
File Size 326.84 KB
Description N-CHANNEL 700V - 6W - 1.6A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
Datasheet download datasheet STD2NK70Z-1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STD2NK70Z STD2NK70Z-1 s s s s s s STD2NK70Z - STD2NK70Z-1 www.DataSheet4U.com Figure 1: Package ID 1.6 A 1.6 A Pw 45 W 45 W 7Ω 7Ω VDSS 700 V 700 V RDS(on) TYPICAL RDS(on) = 6 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 2 1 3 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application.