STD2NM60 Datasheet PDF | STMicroelectronics

STMicroelectronics STD2NM60

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Part No.	STD2NM60
Datasheet	STD2NM60 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
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DESCRIPTION

The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT VESD(G-S) dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 600 600 ±30 2 1.26 8 46 0.37 1 15 –65 to 150 150 (1)ISD<2A, di/dt<400A/µs, VDD<V(BR)DSS , TJ<TJMAX Unit V V V A A A W W/°C kV V/ns °C °C (●)Pulse width limite...