STMicroelectronics STD30NE06L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD30NE06L |
|---|---|
| Datasheet | STD30NE06L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Symb ol V DS VGS ID ID V DGR mABSOLUTE MAXIMUM RATINGS
Parameter Value 60 60 ± 20 30 21 120 o Unit V V V A A A W W /o C V/ns o o taS hee t4U .co I DM (● ) P tot Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Derating Factor T otal Dissipation at Tc = 25 C 55 0.37 7 -65 to 175 175 ( 1) ISD ≤30A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX dv/ dt (1 ) Peak Diode Recovery voltage slope T st g Tj Storage Temperature Max. Operating Junction Temperature C C (●) Pulse width limited by safe operating area w.D a May 1999 1/8 ww STD30NE06L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junction-PC Board Max Thermal Resist...
