STMicroelectronics STD30PF03L
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge.| Part No. | STD30PF03L |
|---|---|
| Datasheet | STD30PF03L Download |
| Manufacturer |  STMicroelectronics |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM sAPPLICATIONS
DC-DC CONVERTERS Symbol VDS VDGR VGS ID (#) ID (#) PTOT Tstg Tj mABSOLUTE MAXIMUM RATINGS
Parameter Value 30 30 ± 16 24 24 96 70 0.47 – 55 to 175 175 Unit V V V A A A W W/°C °C °C 4U eet IDM (l) Sh ata .co Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature (q) Pulse width limited by safe operating area (#) Current limited by wire bonding Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed ww w.D May 2002 1/8 STD30PF03L - STD30PF03L-1 THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Operating Junction Temperature 2.14 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter A...
