STMicroelectronics STD35N3LH5
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).FEATURES
Type STD35N3LH5●
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● VDSS 30 V RDS(on) max < 16 mΩ ID 35 A 3 1 100% avalanche tested Surface mounting DPAK (TO-252) RDS(on) * Qg industry benchmark Low gate drive power losses DPAK
APPLICATIONS
● Switching applications – Automotive Figure 1. Internal schematic diagramDESCRIPTION
Table 1. Device summary Marking D35N3LH5 Package DPAK Packaging Tape and reel Order codes STD35N3LH5 October 2009 Doc ID 16359 Rev 1 1/11 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD35N3LH5 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .