STMicroelectronics STD35NF06
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.STD35NF06 Specifications
- Drain-Source Resistance : 24mΩ
- Min Breakdown Voltage : 60V
- Terminals : 2
- Max Power Dissipation : 55W
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | STD35NF06 |
|---|---|
| Datasheet | STD35NF06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 35 24.5 140 55 0.37 5 –55 to 175 (1)ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C (●)Pulse width limited by safe operating area October 2001 1/9 STD35NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.7 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Sym...
