STMicroelectronics STD38NF03L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID (*) ID I DM (● ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 38 27 152 45 0.3 -65 to 175 175 ( *)Value limited by the package Unit V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area March 2000 1/6 STD38NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maximum Lead Temperature F or Soldering Purpose 3.33 62.5 1.5 300 o o C...