STD3LN80K5 Datasheet | STMicroelectronics

N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a DPAK package - production data Features Order code STD3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A Figure 1: Internal schematic diagram D(2, TAB) - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications G(1) S(3) Order code STD3LN80K5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM01476v1 Table 1: Device summary Marking Package 3LN80K5 DPAK Packing Tape and reel July 2016 Doc ID027714 Rev 2 This is information on a product in full...