STMicroelectronics STD3LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.FEATURES
Order code STD3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A Figure 1: Internal schematic diagram D(2, TAB)● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1) S(3) Order code STD3LN80K5DESCRIPTION
AM01476v1 Table 1: Device summary Marking Package 3LN80K5 DPAK Packing Tape and reel July 2016 DocID027714 Rev 2 This is information on a product in full production. 1/15 Contents Contents STD3LN80K5 1