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STD3LN80K5 Datasheet PDF

STMicroelectronics STD3LN80K5

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Part No. STD3LN80K5
Datasheet STD3LN80K5 Download
Manufacturer
STMicroelectronics
Description N-channel Power MOSFET
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STD3LN80K5 datasheet page 1 preview

FEATURES

Order code STD3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A Figure 1: Internal schematic diagram D(2, TAB)
● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected

APPLICATIONS

● Switching applications G(1) S(3) Order code STD3LN80K5

DESCRIPTION

AM01476v1 Table 1: Device summary Marking Package 3LN80K5 DPAK Packing Tape and reel July 2016 DocID027714 Rev 2 This is information on a product in full production. 1/15 Contents Contents STD3LN80K5 1
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