STMicroelectronics STD3N25
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
APPLICATIONS
HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT s PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS s INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 250 250 ± 20 3 1.9 12 45 0.36 -65 to 150 150 Unit V V V A A A W W/o C o o C C (●) Pulse width limited by safe operating area January 1995 1/10 STD3N25 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximu...