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STD3NK100Z - N-channel 1000V 2.5A Power MOSFET

General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Key Features

  • Order code VDS STD3NK100Z 1000 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected RDS(on) max. 6.0 Ω ID 2.5 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD3NK100Z Datasheet N-channel 1000 V, 5.4 Ω typ., 2.5 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD3NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 6.0 Ω ID 2.5 A Applications • Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.