STMicroelectronics STD3NK100Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.| Part No. | STD3NK100Z |
|---|---|
| Datasheet | STD3NK100Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 1000V 2.5A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD3NK100Z 1000 V● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected RDS(on) max. 6.0 Ω ID 2.5 A
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01476v1_tab In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK100Z Product summary Order code STD3NK100Z Marking D3NK100Z Package DPAK Packing Tape and reel DS5252 - Rev 5 - January 2025 For further information, contact your local STMicroelectronics sales office. STD3NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
