STMicroelectronics STD3NK50Z-1
N-Channel MOSFET
STD3NK50Z-1 Specifications
- Package : TO-251-3
- Mount Type : Through Hole
- Breakdown Voltage : 500V
- Threshold Voltage : 3.75V
- RDS(on) Max : 3.3Ω
- Input Capacitance : 280pF
- Terminals : 3
- Rise Time : 13ns
- Fall Time : 14ns
- Max Power Dissipation : 45W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STD3NK50Z-1 |
|---|---|
| Datasheet | STD3NK50Z-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDSS RDS(on) max. STD3NK50Z-1 STD3NK50ZT4 500 V 3.3 Ω● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected PTOT 45 W Package IPAK DPAK G(1)
APPLICATIONS
● Switching applications S(3) AM01475V1 Product status link STD3NK50Z-1 STD3NK50ZT4DESCRIPTION
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS3956 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. STD3NK50Z-1, STD3NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous...
