DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP3NK60Z STP3NK60ZFP STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 July 2003 MARKING P3NK60Z P3NK60ZFP B3NK60Z D3NK60Z D3NK60Z PACKAGE TO-220 TO-220FP D2PAK IPAK DPAK PACKAGING TUBE TUBE TAPE & REEL TUBE TAPE & REEL 1/15 STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP3NK60Z STB3NK60Z Value STP3NK60ZFP STD3NK60Z STD3NK60Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
STMicroelectronics
