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STD3NM60 - N-CHANNEL MOSFET

General Description

known PowerMESH™ horizontal layout structure.

leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics.

Key Features

  • Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu.
  • High dv/dt and avalanche capabilities te P.
  • Improved ESD capability le.
  • Low input capacitance and gate charge o.
  • Low gate input resistance bs.
  • Tight process control and high manufacturing Oyields t(s) -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu■ High dv/dt and avalanche capabilities te P■ Improved ESD capability le■ Low input capacitance and gate charge o■ Low gate input resistance bs■ Tight process control and high manufacturing Oyields t(s) -Applications c■ Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics. 3 2 1 TO-220 3 1 DPAK IPAK 3 2 1 Figure 1.