Click to expand full text
STD3NM60N
N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package
Datasheet — preliminary data
Features
Order codes STD3NM60N
VDSS @TJmax
650 V
RDS(on) max.
< 1.8 Ω
ID 3.3 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
TAB
3 1
DPAK
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
!-V
Table 1.
STD3NM60N Datasheet
