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STD3NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary.

Key Features

  • Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance TAB 3 1 DPAK.