Datasheet Details
| Part number | STD3PS25-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 443.31 KB |
| Description | P-CHANNEL MOSFET |
| Datasheet |
 STD3PS25-1 Datasheet
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General Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.
Key Features
- OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD3PS25.