STD40NF06LZ Datasheet PDF | STMicroelectronics

STMicroelectronics STD40NF06LZ

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Part No.	STD40NF06LZ
Datasheet	STD40NF06LZ Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
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DESCRIPTION

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITOTS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot VESD(G-S) dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source ESD(HBM-C=100pF, R=15kΩ) Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 16 40 28 160 100 0.67 ± 2.5 9 450 -55 to 175 (1)ISD ≤40A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX . (2) Starting Tj = 25 oC ID = 20A VDD = 45V Unit V V V A A A W W/°C kV V/ns mJ °C (●) Pulse width limited by safe operating area. October 2002 . 1/8 STD40NF06LZ THERMAL DATA Rthj-case Rthj-PCB Tl Thermal Resistance Junction-case...