STMicroelectronics STD45NF03L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.STD45NF03L Specifications
- Drain-Source Resistance : 18mΩ
- Min Breakdown Voltage : 30V
- Terminals : 2
- Max Power Dissipation : 55W
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | STD45NF03L |
|---|---|
| Datasheet | STD45NF03L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (● ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 45 31.5 180 55 0.37 200 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 22.5A , VDD = 20V Unit V V V A A A W W /o C mJ o o C C (●) Pulse width limited by safe operating area September 1999 1/6 STD45NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maxi...
