STMicroelectronics STD45NF75
N-CHANNEL POWER MOSFET
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONS
● HIGH CURRENT, SWITCHINGAPPLICATIONS
INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STD45NF75T4 MARKING D45NF75 PACKAGE DPAK PACKAGING TAPE & REELABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage (VGS = 0) VDS VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID(**) Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM(●) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) Single Pulse Avalanche Energy EAS (2) Tstg Storage Temperature Tj Operating Junction Temperature (●) Pulse width limited by safe operati...