STMicroelectronics STD46N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD46N6F7 |
|---|---|
| Datasheet | STD46N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD46N6F7 VDS 60 V RDS(on) max. 0.014 Ω ID 15 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD46N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 46N6F7 DPAK Packaging Tape and reel January 2016 DocID028323 Rev 2 This is information on a product in full production. 1/14 Contents Contents STD46N6F7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information .......................................................................
