STMicroelectronics STD47N10F7AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD47N10F7AG |
|---|---|
| Datasheet | STD47N10F7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● AEC-Q101 qualified
● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD47N10F7AG AM01475v1_noZen Table 1: Device summary Marking Package 47N10F7 DPAK Packing Tape and reel February 2017 DocID027183 Rev 3 This is information on a product in full production. 1/16 Contents Co
