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N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
TYPE STD4N20
www.DataSheet4U.com s TYPICAL
s s s
STD4N20
VDSS 200 V
RDS(on) < 1.5 Ω
ID 4A
RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL
3 1
DPAK TO-252 IPAK TO-251
2 1
3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.