STMicroelectronics STD4N80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STD4N80K5 |
|---|---|
| Datasheet | STD4N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 3A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD4N80K5 800 V 2.5 Ω 3A● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
Product status link STD4N80K5 Product summary Order code STD4N80K5 Marking 4N80K5 Package DPAK Packing Tape and reel DS14549 - Rev 1 - December 2023 For further information contact your local STMicroelectronics sales office. STD4N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 3 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS.
