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STD4NB25 - N-CHANNEL MOSFET

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Full PDF Text Transcription for STD4NB25 (Reference)

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® STD4NB25 N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD4NB25 ν ν VDSS 250 V R DS(on) < 1.1 Ω ID 4A TYPICAL RDS(on) = 0.95 Ω EXTRE...

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5 ν ν VDSS 250 V R DS(on) < 1.1 Ω ID 4A TYPICAL RDS(on) = 0.95 Ω EXTREMELY HIGH dv/dt CAPABILITY www.DataSheet4U.com ν 100% AVALANCHE TESTED ν VERY LOW INTRINSIC CAPACITANCES ν GATE CHARGE MINIMIZED ν FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switch

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