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STD4NB25
N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STD4NB25
ν ν
VDSS 250 V
R DS(on) < 1.1 Ω
ID 4A
TYPICAL RDS(on) = 0.95 Ω EXTREMELY HIGH dv/dt CAPABILITY www.DataSheet4U.com ν 100% AVALANCHE TESTED ν VERY LOW INTRINSIC CAPACITANCES ν GATE CHARGE MINIMIZED ν FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STD4NB25 Datasheet
