STMicroelectronics STD4NC50-1
N-CHANNEL MOSFET
| Part No. | STD4NC50-1 |
|---|---|
| Datasheet | STD4NC50-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES sABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (*) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 3.7 2.3 14.8 50 0.4 3 –65 to 150 150 (1)ISD ≤ 3.7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
