STMicroelectronics STD4NK100Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. The HTRB test was performed at 80% V(BR)DSS in compliance with AECQ101 rev.| Part No. | STD4NK100Z |
|---|---|
| Datasheet | STD4NK100Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A● AEC-Q101 qualified
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK100Z Product summary(1) Order code STD4NK100Z Marking 4NK100Z Package DPAK Packing Tape and reel 1. C. All the other tests were performed according to rev. D. DS8902 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office. STD4NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation...
