STD4NK50Z-1 Datasheet | STMicroelectronics

STD4NK50Z-1, STD4NK50ZT4 N-channel 500 V, 2.2 Ω typ., 3 A Super MESH™ Power MOSFETs in IPAK and DPAK packages TAB IPAK 3 12 D(2, TAB) TAB 23 1 DPAK Features Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected PTOT 45 W Package IPAK DPAK G(1) Applications - Switching applications S(3) AM01475V1 Product status link STD4NK50Z-1 STD4NK50ZT4 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the Super MESH™ technology by STMicroelectronics, an optimization of the well-established Power MESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2913 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales...