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STD4NK50Z-1 - N-CHANNEL Power MOSFET

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected PTOT 45 W Package IPAK DPAK G(1).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD4NK50Z-1, STD4NK50ZT4 Datasheet N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages TAB IPAK 3 12 D(2, TAB) TAB 23 1 DPAK Features Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Applications • Switching applications S(3) AM01475V1 Product status link STD4NK50Z-1 STD4NK50ZT4 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.