DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 4 2.5 16 50 0.4 5 –65 to 150 150 (1) ISD≤ 4A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (●)Pulse width limited by safe operating area February 2001 1/9 STD4NS25 THERMAL DATA Rthj-case Rthj...
STMicroelectronics
