STMicroelectronics STD55N4F5
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.| Part No. | STD55N4F5 |
|---|---|
| Datasheet | STD55N4F5 Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFETs |
| Buy | Stock & Price |
FEATURES
Type STD55N4F5●
●
● VDSS 40 V RDS(on) max < 10 mΩ ID 55 A Pw 60 W 3 1 Standard threshold drive 100% avalanche tested Surface mounting DPAK (TO-252) DPAK
APPLICATIONS
● Switching applications – Automotive Figure 1. Internal schematic diagramDESCRIPTION
Table 1. Device summary Marking D55N4 Package DPAK Packaging Tape and reel Order codes STD55N4F5 May 2009 Doc ID 15661 Rev 1 1/11 11 Contents STD55N4F5 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
