STMicroelectronics STD5N20
N - CHANNEL POWER MOS TRANSISTOR
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC CONVERTERS & DC-AC INVERTERS s TELECOMMUNICATION POWER SUPPLIES INDUSTRIAL MOTOR DRIVES INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM (● ) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 200 200 ± 20 5 3.5 20 45 0.36 -65 to 150 150 Un it V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area March 1999 1/10 STD5N20 THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp 2.77 100 1.5 275 o o C/W C/W o C/W o...