STMicroelectronics STD5N52U
This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.| Part No. | STD5N52U |
|---|---|
| Datasheet | STD5N52U Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD5N52U 525 V● Outstanding dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitances
● Very low RDS(on)
● Extremely low trr RDS(on) max. 1.50 Ω ID 4.4 A
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
Product status link STD5N52U Product summary Order code STD5N52U Marking 5N52U Package DPAK Packing Tape and reel DS6261 - Rev 5 - June 2023 For further information contact your local STMicroelectronics sales office. STD5N52U Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS ID IDM (1) PTOT dv/dt Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC= 100 °C Drain current (pulsed) Total power dissipation at TC = 25 °C Peak diode recovery voltage slope Tstg TJ ESD Storage temperature range Operating junction temperature range Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 1. Pulse width limited by safe operating area. 2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR)DSS Value ±30 4.4 2.8 17.6 70 20 -55 to 150 2.8 Table 2.
