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STD5N62K3 - N-channel MOSFET

Download the STD5N62K3 datasheet PDF. This datasheet also covers the STB5N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

Key Features

  • Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3.
  • VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 1 1 3 2 D²PAK IPAK Internal schematic diagram D(2).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB5N-62K3.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STD5N60DM2 N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 Ω , 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK Features Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 ■ ■ ■ ■ ■ ■ VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1.