STMicroelectronics STD5N95K3
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.| Part No. | STD5N95K3 |
|---|---|
| Datasheet | STD5N95K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD5N95K3 950 V 3.5 Ω 4A● 100% avalanche tested
● Extremely high dv/dt capability
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
Product status link STD5N95K3 Product summary Order code STD5N95K3 Marking 5N95K3 Package DPAK Packing Tape and reel DS6265 - Rev 4 - April 2023 For further information contact your local STMicroelectronics sales office. STD5N95K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
