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STD5N95K3 - N-Channel Power MOSFET

General Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure.

Key Features

  • Order code VDS RDS(on) max. ID STD5N95K3 950 V 3.5 Ω 4A.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription for STD5N95K3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD5N95K3. For precise diagrams, and layout, please refer to the original PDF.

STD5N95K3 Datasheet N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD5...

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DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD5N95K3 950 V 3.5 Ω 4A • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications AM01476v1_tab Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding ap

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