STMicroelectronics STD5NE10L
This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD5NE10L |
|---|---|
| Datasheet | STD5NE10L Download |
| Manufacturer |  STMicroelectronics |
| Description | N - CHANNEL STripFET POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (● ) P tot dv/dt( 1 ) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o Value 100 100 ± 20 5 3.5 20 25 0.2 6 -65 to 150 150 ( 1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o o C C 1/5 (●) Pulse width limited by safe operating area October 1998 STD5NE10L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or...
