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STD5NM50AG Description

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is...

STD5NM50AG Key Features

  • AEC-Q101 qualified
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance