STD5NM50T4 Description
This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's PowerMESH™ horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar...
STD5NM50T4 Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance