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STD5NM50T4 - N-channel MOSFET

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.

This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics.

Features

  • Order code VDS RDS(on) max. STD5NM50T4 500 V 0.8 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STD5NM50T4 Datasheet N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh™ Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. STD5NM50T4 500 V 0.8 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ID 7.5 A G(1) S(3) AM01475v1_noZen Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
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