STD5NM60-1 Datasheet | STMicroelectronics

N-channel 600 V, 0.9 Ω typ., 5 A MDmesh Power MOSFET in an IPAK package Features Order code RDS(on) max. 600 V 1.0 Ω 5A 2 1 - 100% avalanche tested - Low input capacitance and gate charge IPAK - Low gate input resistance D(2, TAB) Applications - Switching applications G(1) S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's...